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2SJ652-1E
- Varenummer:
- 2SJ652-1E
- Fabrikant:
- AMI Semiconductor / ON Semiconductor
- Beskrivelse:
- MOSFET P-CH 60V 28A TO-220FP-3
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 19307 Pieces
- Datablad:
- 2SJ652-1E.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | - |
|---|---|
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | TO-220F-3SG |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 38 mOhm @ 14A, 10V |
| Power Dissipation (Max): | 2W (Ta), 30W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-220-3 Full Pack |
| Andre navne: | 2SJ652-1E-ND 2SJ652-1EOS |
| Driftstemperatur: | 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 6 Weeks |
| Producentens varenummer: | 2SJ652-1E |
| Inputkapacitans (Ciss) (Max) @ Vds: | 4360pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs: | 80nC @ 10V |
| FET Type: | P-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | P-Channel 60V 28A (Ta) 2W (Ta), 30W (Tc) Through Hole TO-220F-3SG |
| Drevspænding (Maks. Rds On, Min Rds On): | 4V, 10V |
| Afløb til Source Voltage (VDSS): | 60V |
| Beskrivelse: | MOSFET P-CH 60V 28A TO-220FP-3 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 28A (Ta) |
| Email: | [email protected] |
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