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FQD1N60CTM
- Varenummer:
- FQD1N60CTM
- Fabrikant:
- Fairchild/ON Semiconductor
- Beskrivelse:
- MOSFET N-CH 600V 1A DPAK
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 18262 Pieces
- Datablad:
- 1.FQD1N60CTM.pdf2.FQD1N60CTM.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for FQD1N60CTM, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til FQD1N60CTM via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 4V @ 250µA |
|---|---|
| Vgs (Max): | ±30V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | D-Pak |
| Serie: | QFET® |
| Rds On (Max) @ Id, Vgs: | 11.5 Ohm @ 500mA, 10V |
| Power Dissipation (Max): | 2.5W (Ta), 28W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Andre navne: | FQD1N60CTM-ND FQD1N60CTMTR |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 6 Weeks |
| Producentens varenummer: | FQD1N60CTM |
| Inputkapacitans (Ciss) (Max) @ Vds: | 170pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 6.2nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 600V 1A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount D-Pak |
| Drevspænding (Maks. Rds On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 600V |
| Beskrivelse: | MOSFET N-CH 600V 1A DPAK |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 1A (Tc) |
| Email: | [email protected] |
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