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FQI7N80TU
- Varenummer:
- FQI7N80TU
- Fabrikant:
- Fairchild/ON Semiconductor
- Beskrivelse:
- MOSFET N-CH 800V 6.6A I2PAK
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 14614 Pieces
- Datablad:
- FQI7N80TU.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 5V @ 250µA |
|---|---|
| Vgs (Max): | ±30V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | I2PAK (TO-262) |
| Serie: | QFET® |
| Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 3.3A, 10V |
| Power Dissipation (Max): | 3.13W (Ta), 167W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 6 Weeks |
| Producentens varenummer: | FQI7N80TU |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1850pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 52nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 800V 6.6A (Tc) 3.13W (Ta), 167W (Tc) Through Hole I2PAK (TO-262) |
| Drevspænding (Maks. Rds On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 800V |
| Beskrivelse: | MOSFET N-CH 800V 6.6A I2PAK |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 6.6A (Tc) |
| Email: | [email protected] |
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