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IPD80R1K4CEATMA1
- Varenummer:
- IPD80R1K4CEATMA1
- Beskrivelse:
- MOSFET N-CH 800V 3.9A TO252-3
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 17075 Pieces
- Datablad:
- IPD80R1K4CEATMA1.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 3.9V @ 240µA |
|---|---|
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PG-TO252-3 |
| Serie: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 2.3A, 10V |
| Power Dissipation (Max): | 63W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Andre navne: | IPD80R1K4CEATMA1-ND IPD80R1K4CEATMA1TR SP001130972 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 6 Weeks |
| Producentens varenummer: | IPD80R1K4CEATMA1 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 570pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 800V 3.9A (Tc) 63W (Tc) Surface Mount PG-TO252-3 |
| Drevspænding (Maks. Rds On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 800V |
| Beskrivelse: | MOSFET N-CH 800V 3.9A TO252-3 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 3.9A (Tc) |
| Email: | [email protected] |
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