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IPN60R3K4CEATMA1
- Varenummer:
- IPN60R3K4CEATMA1
- Beskrivelse:
- MOSFET NCH 600V 2.6A SOT223
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 14111 Pieces
- Datablad:
- IPN60R3K4CEATMA1.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for IPN60R3K4CEATMA1, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til IPN60R3K4CEATMA1 via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 3.5V @ 40µA |
|---|---|
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PG-SOT223 |
| Serie: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 3.4 Ohm @ 500mA, 10V |
| Power Dissipation (Max): | 5W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | TO-261-4, TO-261AA |
| Andre navne: | IPN60R3K4CEATMA1TR SP001434888 |
| Driftstemperatur: | -40°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 3 (168 Hours) |
| Fabrikantens standard ledetid: | 12 Weeks |
| Producentens varenummer: | IPN60R3K4CEATMA1 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 93pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 4.6nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | Super Junction |
| Udvidet beskrivelse: | N-Channel 600V 2.6A (Tc) 5W (Tc) Surface Mount PG-SOT223 |
| Drevspænding (Maks. Rds On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 600V |
| Beskrivelse: | MOSFET NCH 600V 2.6A SOT223 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 2.6A (Tc) |
| Email: | [email protected] |
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