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Vgs (th) (Max) @ Id: | 4V @ 94µA |
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Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | PG-TO220-3-1 |
Serie: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 75A, 10V |
Power Dissipation (Max): | 158W (Tc) |
Emballage: | Tube |
Pakke / tilfælde: | TO-220-3 |
Andre navne: | IPP120N06N G IPP120N06N G-ND IPP120N06NGIN IPP120N06NGIN-ND IPP120N06NGX IPP120N06NGXK SP000204175 |
Driftstemperatur: | -55°C ~ 175°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Producentens varenummer: | IPP120N06NGAKSA1 |
Inputkapacitans (Ciss) (Max) @ Vds: | 2100pF @ 30V |
Gate Charge (Qg) (Max) @ Vgs: | 62nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 60V 75A (Tc) 158W (Tc) Through Hole PG-TO220-3-1 |
Afløb til Source Voltage (VDSS): | 60V |
Beskrivelse: | MOSFET N-CH 60V 75A TO-220 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 75A (Tc) |
Email: | [email protected] |