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IPW65R190E6FKSA1
- Varenummer:
- IPW65R190E6FKSA1
- Beskrivelse:
- MOSFET N-CH 650V 20.2A TO247
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 12506 Pieces
- Datablad:
- IPW65R190E6FKSA1.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 3.5V @ 730µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PG-TO247-3 |
| Serie: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 190 mOhm @ 7.3A, 10V |
| Power Dissipation (Max): | 151W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-247-3 |
| Andre navne: | IPW65R190E6 IPW65R190E6-ND SP000863906 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 12 Weeks |
| Producentens varenummer: | IPW65R190E6FKSA1 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1620pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 73nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 650V 20.2A (Tc) 151W (Tc) Through Hole PG-TO247-3 |
| Afløb til Source Voltage (VDSS): | 650V |
| Beskrivelse: | MOSFET N-CH 650V 20.2A TO247 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 20.2A (Tc) |
| Email: | [email protected] |
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