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IRFD113PBF
- Varenummer:
- IRFD113PBF
- Fabrikant:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N-CH 60V 800MA 4-DIP
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 14168 Pieces
- Datablad:
- IRFD113PBF.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 4V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | 4-HVMDIP |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 800 mOhm @ 800mA, 10V |
| Power Dissipation (Max): | 1W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | 4-DIP (0.300", 7.62mm) |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 10 Weeks |
| Producentens varenummer: | IRFD113PBF |
| Inputkapacitans (Ciss) (Max) @ Vds: | 200pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 7nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 60V 800mA (Tc) 1W (Tc) Through Hole 4-HVMDIP |
| Afløb til Source Voltage (VDSS): | 60V |
| Beskrivelse: | MOSFET N-CH 60V 800MA 4-DIP |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 800mA (Tc) |
| Email: | [email protected] |
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