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IXFT4N100Q
- Varenummer:
- IXFT4N100Q
- Fabrikant:
- IXYS Corporation
- Beskrivelse:
- MOSFET N-CH 1000V 4A TO-268
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 14925 Pieces
- Datablad:
- IXFT4N100Q.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 5V @ 1.5mA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | TO-268 |
| Serie: | HiPerFET™ |
| Rds On (Max) @ Id, Vgs: | 3 Ohm @ 2A, 10V |
| Power Dissipation (Max): | 150W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | IXFT4N100Q |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1050pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 1000V (1kV) 4A (Tc) 150W (Tc) Surface Mount TO-268 |
| Afløb til Source Voltage (VDSS): | 1000V (1kV) |
| Beskrivelse: | MOSFET N-CH 1000V 4A TO-268 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 4A (Tc) |
| Email: | [email protected] |
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