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NTLJS1102PTBG
- Varenummer:
- NTLJS1102PTBG
- Fabrikant:
- AMI Semiconductor / ON Semiconductor
- Beskrivelse:
- MOSFET P-CH 8V 3.7A 6-WDFN
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 17828 Pieces
- Datablad:
- NTLJS1102PTBG.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 720mV @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | 6-WDFN (2x2) |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 36 mOhm @ 6.2A, 4.5V |
| Power Dissipation (Max): | 700mW (Ta) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | 6-WDFN Exposed Pad |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | NTLJS1102PTBG |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1585pF @ 4V |
| Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 4.5V |
| FET Type: | P-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | P-Channel 8V 3.7A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2) |
| Afløb til Source Voltage (VDSS): | 8V |
| Beskrivelse: | MOSFET P-CH 8V 3.7A 6-WDFN |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 3.7A (Ta) |
| Email: | [email protected] |
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