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SI9945BDY-T1-GE3
- Varenummer:
- SI9945BDY-T1-GE3
- Fabrikant:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET 2N-CH 60V 5.3A 8-SOIC
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 14156 Pieces
- Datablad:
- SI9945BDY-T1-GE3.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 3V @ 250µA |
|---|---|
| Leverandør Device Package: | 8-SO |
| Serie: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 58 mOhm @ 4.3A, 10V |
| Strøm - Max: | 3.1W |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | 8-SOIC (0.154", 3.90mm Width) |
| Andre navne: | SI9945BDY-T1-GE3-ND SI9945BDY-T1-GE3TR SI9945BDYT1GE3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 15 Weeks |
| Producentens varenummer: | SI9945BDY-T1-GE3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 665pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
| FET Type: | 2 N-Channel (Dual) |
| FET-funktion: | Logic Level Gate |
| Udvidet beskrivelse: | Mosfet Array 2 N-Channel (Dual) 60V 5.3A 3.1W Surface Mount 8-SO |
| Afløb til Source Voltage (VDSS): | 60V |
| Beskrivelse: | MOSFET 2N-CH 60V 5.3A 8-SOIC |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 5.3A |
| Email: | [email protected] |
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