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SIHB35N60E-GE3
- Varenummer:
- SIHB35N60E-GE3
- Fabrikant:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N-CH 600V 32A D2PAK TO263
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 19619 Pieces
- Datablad:
- SIHB35N60E-GE3.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 4V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | D²PAK (TO-263) |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 94 mOhm @ 17A, 10V |
| Power Dissipation (Max): | 250W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Andre navne: | SiHB35N60E-GE3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 10 Weeks |
| Producentens varenummer: | SIHB35N60E-GE3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 2760pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 132nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 650V 32A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263) |
| Afløb til Source Voltage (VDSS): | 650V |
| Beskrivelse: | MOSFET N-CH 600V 32A D2PAK TO263 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 32A (Tc) |
| Email: | [email protected] |
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