Købe SIR412DP-T1-GE3 med BYCHPS
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SIR412DP-T1-GE3
- Varenummer:
- SIR412DP-T1-GE3
- Fabrikant:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N-CH 25V 20A PPAK SO-8
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 19462 Pieces
- Datablad:
- SIR412DP-T1-GE3.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for SIR412DP-T1-GE3, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til SIR412DP-T1-GE3 via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 2.5V @ 250µA |
|---|---|
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PowerPAK® SO-8 |
| Serie: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 12 mOhm @ 10A, 10V |
| Power Dissipation (Max): | 3.9W (Ta), 15.6W (Tc) |
| Emballage: | Original-Reel® |
| Pakke / tilfælde: | PowerPAK® SO-8 |
| Andre navne: | SIR412DP-T1-GE3DKR |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 24 Weeks |
| Producentens varenummer: | SIR412DP-T1-GE3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 600pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 25V 20A (Tc) 3.9W (Ta), 15.6W (Tc) Surface Mount PowerPAK® SO-8 |
| Drevspænding (Maks. Rds On, Min Rds On): | 4.5V, 10V |
| Afløb til Source Voltage (VDSS): | 25V |
| Beskrivelse: | MOSFET N-CH 25V 20A PPAK SO-8 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 20A (Tc) |
| Email: | [email protected] |
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