Købe SPP18P06PHKSA1 med BYCHPS
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Vgs (th) (Max) @ Id: | 4V @ 1mA |
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Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | PG-TO-220-3 |
Serie: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 130 mOhm @ 13.2A, 10V |
Power Dissipation (Max): | 81.1W (Ta) |
Emballage: | Tube |
Pakke / tilfælde: | TO-220-3 |
Andre navne: | SP000012300 SPP18P06P SPP18P06PIN SPP18P06PIN-ND SPP18P06PX SPP18P06PXK SPP18P06PXTIN SPP18P06PXTIN-ND |
Driftstemperatur: | -55°C ~ 175°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Producentens varenummer: | SPP18P06PHKSA1 |
Inputkapacitans (Ciss) (Max) @ Vds: | 860pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 10V |
FET Type: | P-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | P-Channel 60V 18.7A (Ta) 81.1W (Ta) Through Hole PG-TO-220-3 |
Afløb til Source Voltage (VDSS): | 60V |
Beskrivelse: | MOSFET P-CH 60V 18.7A TO-220AB |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 18.7A (Ta) |
Email: | [email protected] |