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STB11NM60-1
- Varenummer:
- STB11NM60-1
- Fabrikant:
- ST
- Beskrivelse:
- MOSFET N-CH 650V 11A I2PAK
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 12886 Pieces
- Datablad:
- STB11NM60-1.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for STB11NM60-1, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til STB11NM60-1 via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 5V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | I2PAK |
| Serie: | MDmesh™ |
| Rds On (Max) @ Id, Vgs: | 450 mOhm @ 5.5A, 10V |
| Power Dissipation (Max): | 160W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Andre navne: | 497-5379-5 STB11NM60-1-ND |
| Driftstemperatur: | -65°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | STB11NM60-1 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 650V 11A (Tc) 160W (Tc) Through Hole I2PAK |
| Afløb til Source Voltage (VDSS): | 650V |
| Beskrivelse: | MOSFET N-CH 650V 11A I2PAK |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 11A (Tc) |
| Email: | [email protected] |
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