Købe TK12E60W,S1VX med BYCHPS
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TK12E60W,S1VX
- Varenummer:
- TK12E60W,S1VX
- Fabrikant:
- Toshiba Semiconductor
- Beskrivelse:
- MOSFET N CH 600V 11.5A TO-220
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 13107 Pieces
- Datablad:
- TK12E60W,S1VX.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 3.7V @ 600µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | TO-220 |
| Serie: | DTMOSIV |
| Rds On (Max) @ Id, Vgs: | 300 mOhm @ 5.8A, 10V |
| Power Dissipation (Max): | 110W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-220-3 |
| Andre navne: | TK12E60W,S1VX(S TK12E60WS1VX |
| Driftstemperatur: | 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 16 Weeks |
| Producentens varenummer: | TK12E60W,S1VX |
| Inputkapacitans (Ciss) (Max) @ Vds: | 890pF @ 300V |
| Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | Super Junction |
| Udvidet beskrivelse: | N-Channel 600V 11.5A (Ta) 110W (Tc) Through Hole TO-220 |
| Afløb til Source Voltage (VDSS): | 600V |
| Beskrivelse: | MOSFET N CH 600V 11.5A TO-220 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 11.5A (Ta) |
| Email: | [email protected] |
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