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TK7J90E,S1E
- Varenummer:
- TK7J90E,S1E
- Fabrikant:
- Toshiba Semiconductor
- Beskrivelse:
- MOSFET N-CH 900V TO-3PN
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 18192 Pieces
- Datablad:
- TK7J90E,S1E.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 4V @ 700µA |
|---|---|
| Vgs (Max): | ±30V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | TO-3P(N) |
| Serie: | π-MOSVIII |
| Rds On (Max) @ Id, Vgs: | 2 Ohm @ 3.5A, 10V |
| Power Dissipation (Max): | 200W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-3P-3, SC-65-3 |
| Andre navne: | TK7J90E,S1E(S TK7J90ES1E |
| Driftstemperatur: | 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 12 Weeks |
| Producentens varenummer: | TK7J90E,S1E |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1350pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 900V 7A (Ta) 200W (Tc) Through Hole TO-3P(N) |
| Drevspænding (Maks. Rds On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 900V |
| Beskrivelse: | MOSFET N-CH 900V TO-3PN |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 7A (Ta) |
| Email: | [email protected] |
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