Købe TPN22006NH,LQ med BYCHPS
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TPN22006NH,LQ
- Varenummer:
- TPN22006NH,LQ
- Fabrikant:
- Toshiba Semiconductor
- Beskrivelse:
- MOSFET N CH 60V 9A 8-TSON
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 14194 Pieces
- Datablad:
- TPN22006NH,LQ.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 4V @ 100µA |
|---|---|
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | 8-TSON Advance (3.3x3.3) |
| Serie: | U-MOSVIII-H |
| Rds On (Max) @ Id, Vgs: | 22 mOhm @ 4.5A, 10V |
| Power Dissipation (Max): | 700mW (Ta), 18W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | 8-PowerVDFN |
| Andre navne: | TPN22006NH,LQ(S TPN22006NHLQ TPN22006NHLQTR |
| Driftstemperatur: | 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 12 Weeks |
| Producentens varenummer: | TPN22006NH,LQ |
| Inputkapacitans (Ciss) (Max) @ Vds: | 710pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 60V 9A (Ta) 700mW (Ta), 18W (Tc) Surface Mount 8-TSON Advance (3.3x3.3) |
| Drevspænding (Maks. Rds On, Min Rds On): | 6.5V, 10V |
| Afløb til Source Voltage (VDSS): | 60V |
| Beskrivelse: | MOSFET N CH 60V 9A 8-TSON |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 9A (Ta) |
| Email: | [email protected] |
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