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TPN4R712MD,L1Q
- Varenummer:
- TPN4R712MD,L1Q
- Fabrikant:
- Toshiba Semiconductor
- Beskrivelse:
- MOSFET P-CH 20V 36A 8TSON ADV
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 18407 Pieces
- Datablad:
- TPN4R712MD,L1Q.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 1.2V @ 1mA |
|---|---|
| Vgs (Max): | ±12V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | 8-TSON Advance (3.3x3.3) |
| Serie: | U-MOSVI |
| Rds On (Max) @ Id, Vgs: | 4.7 mOhm @ 18A, 4.5V |
| Power Dissipation (Max): | 42W (Tc) |
| Emballage: | Original-Reel® |
| Pakke / tilfælde: | 8-PowerVDFN |
| Andre navne: | TPN4R712MDL1QDKR |
| Driftstemperatur: | 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 12 Weeks |
| Producentens varenummer: | TPN4R712MD,L1Q |
| Inputkapacitans (Ciss) (Max) @ Vds: | 4300pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 5V |
| FET Type: | P-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | P-Channel 20V 36A (Tc) 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3) |
| Drevspænding (Maks. Rds On, Min Rds On): | 2.5V, 4.5V |
| Afløb til Source Voltage (VDSS): | 20V |
| Beskrivelse: | MOSFET P-CH 20V 36A 8TSON ADV |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 36A (Tc) |
| Email: | [email protected] |
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