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TRS8E65C,S1Q
- Varenummer:
- TRS8E65C,S1Q
- Fabrikant:
- Toshiba Semiconductor
- Beskrivelse:
- DIODE SCHOTTKY 650V 8A TO220-2L
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 18953 Pieces
- Datablad:
- TRS8E65C,S1Q.pdf
Introduktion
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specifikationer
| Spænding - Videresend (Vf) (Max) @ Hvis: | 1.7V @ 8A |
|---|---|
| Spænding - DC-omvendt (Vr) (Max): | 650V |
| Leverandør Device Package: | TO-220-2L |
| Fart: | No Recovery Time > 500mA (Io) |
| Serie: | - |
| Reverse Recovery Time (trr): | 0ns |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-220-2 |
| Andre navne: | TRS8E65C,S1Q(S TRS8E65CS1Q |
| Driftstemperatur - Junction: | 175°C (Max) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 12 Weeks |
| Producentens varenummer: | TRS8E65C,S1Q |
| Udvidet beskrivelse: | Diode Silicon Carbide Schottky 650V 8A (DC) Through Hole TO-220-2L |
| Diodetype: | Silicon Carbide Schottky |
| Beskrivelse: | DIODE SCHOTTKY 650V 8A TO220-2L |
| Nuværende - Reverse Lækage @ Vr: | 90µA @ 650V |
| Nuværende - Gennemsnitlig Rectified (Io): | 8A (DC) |
| Kapacitans @ Vr, F: | 44pF @ 650V, 1MHz |
| Email: | [email protected] |
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