Købe 2SA965-O(TE6,F,M) med BYCHPS
Køb med garanti
2SA965-O(TE6,F,M)
- Varenummer:
- 2SA965-O(TE6,F,M)
- Fabrikant:
- Toshiba Semiconductor
- Beskrivelse:
- TRANS PNP 800MA 120V TO226-3
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 17937 Pieces
- Datablad:
- 2SA965-O(TE6,F,M).pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for 2SA965-O(TE6,F,M), vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til 2SA965-O(TE6,F,M) via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Spænding - Samler Emitter Opdeling (Max): | 120V |
|---|---|
| Vce Mætning (Max) @ Ib, Ic: | 1V @ 50mA, 500mA |
| Transistor Type: | PNP |
| Leverandør Device Package: | LSTM |
| Serie: | - |
| Strøm - Max: | 900mW |
| Emballage: | Bulk |
| Pakke / tilfælde: | TO-226-3, TO-92-3 Long Body |
| Andre navne: | 2SA965-O(TE6FM) 2SA965OTE6FM |
| Driftstemperatur: | 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | 2SA965-O(TE6,F,M) |
| Frekvens - Overgang: | 120MHz |
| Udvidet beskrivelse: | Bipolar (BJT) Transistor PNP 120V 800mA 120MHz 900mW Through Hole LSTM |
| Beskrivelse: | TRANS PNP 800MA 120V TO226-3 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 100mA, 5V |
| Nuværende - Collector Cutoff (Max): | 100nA (ICBO) |
| Nuværende - Samler (Ic) (Max): | 800mA |
| Email: | [email protected] |
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