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APTM100DA18CT1G
- Varenummer:
- APTM100DA18CT1G
- Fabrikant:
- Microsemi
- Beskrivelse:
- MOSFET N-CH 1000V 40A SP1
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 16732 Pieces
- Datablad:
- APTM100DA18CT1G.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for APTM100DA18CT1G, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til APTM100DA18CT1G via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 5V @ 2.5mA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | SP1 |
| Serie: | POWER MOS 8™ |
| Rds On (Max) @ Id, Vgs: | 216 mOhm @ 33A, 10V |
| Power Dissipation (Max): | 657W (Tc) |
| Emballage: | Bulk |
| Pakke / tilfælde: | SP1 |
| Driftstemperatur: | -40°C ~ 150°C (TJ) |
| Monteringstype: | Chassis Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | APTM100DA18CT1G |
| Inputkapacitans (Ciss) (Max) @ Vds: | 14800pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 570nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 1000V (1kV) 40A 657W (Tc) Chassis Mount SP1 |
| Afløb til Source Voltage (VDSS): | 1000V (1kV) |
| Beskrivelse: | MOSFET N-CH 1000V 40A SP1 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 40A |
| Email: | [email protected] |
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