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C2M0080120D
- Varenummer:
- C2M0080120D
- Fabrikant:
- Cree
- Beskrivelse:
- MOSFET N-CH 1200V 31.6A TO247
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 18650 Pieces
- Datablad:
- C2M0080120D.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 4V @ 5mA |
|---|---|
| Vgs (Max): | +25V, -10V |
| Teknologi: | SiCFET (Silicon Carbide) |
| Leverandør Device Package: | TO-247-3 |
| Serie: | C2M™ |
| Rds On (Max) @ Id, Vgs: | 98 mOhm @ 20A, 20V |
| Power Dissipation (Max): | 192W (Tc) |
| Emballage: | Bulk |
| Pakke / tilfælde: | TO-247-3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 8 Weeks |
| Producentens varenummer: | C2M0080120D |
| Inputkapacitans (Ciss) (Max) @ Vds: | 950pF @ 1000V |
| Gate Charge (Qg) (Max) @ Vgs: | 62nC @ 5V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 1200V (1.2kV) 36A (Tc) 192W (Tc) Through Hole TO-247-3 |
| Drevspænding (Maks. Rds On, Min Rds On): | 20V |
| Afløb til Source Voltage (VDSS): | 1200V (1.2kV) |
| Beskrivelse: | MOSFET N-CH 1200V 31.6A TO247 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 36A (Tc) |
| Email: | [email protected] |
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