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C3M0120100J
- Varenummer:
- C3M0120100J
- Fabrikant:
- Cree
- Beskrivelse:
- 1000V, 120 MOHM, G3 SIC MOSFET
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 19917 Pieces
- Datablad:
- C3M0120100J.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 3.5V @ 3mA |
|---|---|
| Vgs (Max): | +15V, -4V |
| Teknologi: | SiC (Silicon Carbide Junction Transistor) |
| Leverandør Device Package: | D2PAK-7 |
| Serie: | C3M™ |
| Rds On (Max) @ Id, Vgs: | 155 mOhm @ 15A, 15V |
| Power Dissipation (Max): | 83W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | C3M0120100J |
| Inputkapacitans (Ciss) (Max) @ Vds: | 350pF @ 600V |
| Gate Charge (Qg) (Max) @ Vgs: | 21.5nC @ 15V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 1000V (1kV) 22A (Tc) 83W (Tc) Surface Mount D2PAK-7 |
| Drevspænding (Maks. Rds On, Min Rds On): | 15V |
| Afløb til Source Voltage (VDSS): | 1000V (1kV) |
| Beskrivelse: | 1000V, 120 MOHM, G3 SIC MOSFET |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 22A (Tc) |
| Email: | [email protected] |
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