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C3M0280090D
- Varenummer:
- C3M0280090D
- Fabrikant:
- Cree
- Beskrivelse:
- MOSFET N-CH 900V 11.5A
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 16191 Pieces
- Datablad:
- C3M0280090D.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 3.5V @ 1.2mA |
|---|---|
| Vgs (Max): | +18V, -8V |
| Teknologi: | SiCFET (Silicon Carbide) |
| Leverandør Device Package: | TO-247-3 |
| Serie: | C3M™ |
| Rds On (Max) @ Id, Vgs: | 360 mOhm @ 7.5A, 15V |
| Power Dissipation (Max): | 54W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-247-3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 8 Weeks |
| Producentens varenummer: | C3M0280090D |
| Inputkapacitans (Ciss) (Max) @ Vds: | 150pF @ 600V |
| Gate Charge (Qg) (Max) @ Vgs: | 9.5nC @ 15V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 900V 11.5A (Tc) 54W (Tc) Through Hole TO-247-3 |
| Drevspænding (Maks. Rds On, Min Rds On): | 15V |
| Afløb til Source Voltage (VDSS): | 900V |
| Beskrivelse: | MOSFET N-CH 900V 11.5A |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 11.5A (Tc) |
| Email: | [email protected] |
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