Købe DMT10H015LCG-13 med BYCHPS
Køb med garanti
DMT10H015LCG-13
- Varenummer:
- DMT10H015LCG-13
- Fabrikant:
- Diodes Incorporated
- Beskrivelse:
- MOSFET NCH 100V 9.4A 8VDFN
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 18420 Pieces
- Datablad:
- DMT10H015LCG-13.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for DMT10H015LCG-13, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til DMT10H015LCG-13 via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 3.5V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | V-DFN3333-8 |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 15 mOhm @ 20A, 10V |
| Power Dissipation (Max): | 1W (Ta) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | 8-VDFN Exposed Pad |
| Driftstemperatur: | -55°C ~ 155°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 16 Weeks |
| Producentens varenummer: | DMT10H015LCG-13 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1871pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs: | 33.3nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 100V 9.4A (Ta), 34A (Tc) 1W (Ta) Surface Mount V-DFN3333-8 |
| Afløb til Source Voltage (VDSS): | 100V |
| Beskrivelse: | MOSFET NCH 100V 9.4A 8VDFN |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 9.4A (Ta), 34A (Tc) |
| Email: | [email protected] |
Relaterede dele til DMT10H015LCG-13
| Billede | Varenummer | producenter | Beskrivelse | Udsigt |
|---|---|---|---|---|
 |
DMT10H015LPS-13 | Diodes Incorporated | MOSFET N-CH 100V 7.3A | Forespørgsel |
 |
DMT10H015LFG-7 | Diodes Incorporated | MOSFET N-CH 100V 10A | Forespørgsel |
 |
DMT10H010LK3-13 | Diodes Incorporated | MOSFET N-CH 100V 68.8A TO252-3 | Forespørgsel |
|
DMT10H015LK3-13 | Diodes Incorporated | MOSFET BVDSS: 61V 100V TO252 T&R | Forespørgsel |
 |
DMT10H010LSS-13 | Diodes Incorporated | MOSFET N-CH 100V SO-8 | Forespørgsel |
|
DMT10H015LFG-13 | Diodes Incorporated | MOSFET N-CH 100V 10A | Forespørgsel |
|
DMT10H014LSS-13 | Diodes Incorporated | MOSFET NCH 100V 8.9A 8SO | Forespørgsel |
|
DMT10H015LCG-7 | Diodes Incorporated | MOSFET NCH 100V 9.4A 8VDFN | Forespørgsel |
|
DMT10H015LSS-13 | Diodes Incorporated | MOSFET N-CH 100V 8.3A | Forespørgsel |
|
DMT10H010LCT | Diodes Incorporated | MOSFET N-CH 100V TO220AB | Forespørgsel |
|
DMT10H010LPS-13 | Diodes Incorporated | MOSFET N-CH 100V 9.4A | Forespørgsel |
Laast News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog