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EPC8009ENGR
- Varenummer:
- EPC8009ENGR
- Fabrikant:
- EPC
- Beskrivelse:
- TRANS GAN 65V 4.1A BUMPED DIE
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 16117 Pieces
- Datablad:
- 1.EPC8009ENGR.pdf2.EPC8009ENGR.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for EPC8009ENGR, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til EPC8009ENGR via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 2.5V @ 250µA |
|---|---|
| Teknologi: | GaNFET (Gallium Nitride) |
| Leverandør Device Package: | Die |
| Serie: | eGaN® |
| Rds On (Max) @ Id, Vgs: | 138 mOhm @ 500mA, 5V |
| Power Dissipation (Max): | - |
| Emballage: | Tray |
| Pakke / tilfælde: | Die |
| Andre navne: | 917-EPC8009ENGR EPC8009ENGG |
| Driftstemperatur: | -40°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | EPC8009ENGR |
| Inputkapacitans (Ciss) (Max) @ Vds: | 47pF @ 32.5V |
| Gate Charge (Qg) (Max) @ Vgs: | 0.38nC @ 5V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 65V 4.1A (Ta) Surface Mount Die |
| Afløb til Source Voltage (VDSS): | 65V |
| Beskrivelse: | TRANS GAN 65V 4.1A BUMPED DIE |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 4.1A (Ta) |
| Email: | [email protected] |
Relaterede dele til EPC8009ENGR
| Billede | Varenummer | producenter | Beskrivelse | Udsigt |
|---|---|---|---|---|
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EPC8007ENGR | EPC | TRANS GAN 40V 3.8A BUMPED DIE | Forespørgsel |
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EPC8002 | EPC | TRANS GAN 65V 2.7A BUMPED DIE | Forespørgsel |
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EPC8010ENGR | EPC | TRANS GAN 100V 2.7A BUMPED DIE | Forespørgsel |
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