Købe EPC8010ENGR med BYCHPS
Køb med garanti
EPC8010ENGR
- Varenummer:
- EPC8010ENGR
- Fabrikant:
- EPC
- Beskrivelse:
- TRANS GAN 100V 2.7A BUMPED DIE
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 16037 Pieces
- Datablad:
- EPC8010ENGR.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for EPC8010ENGR, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til EPC8010ENGR via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 2.5V @ 250µA |
|---|---|
| Teknologi: | GaNFET (Gallium Nitride) |
| Leverandør Device Package: | Die |
| Serie: | eGaN® |
| Rds On (Max) @ Id, Vgs: | 160 mOhm @ 500mA, 5V |
| Power Dissipation (Max): | - |
| Emballage: | Tray |
| Pakke / tilfælde: | - |
| Andre navne: | 917-EPC8010ENGR EPC8010ENGJ |
| Driftstemperatur: | -40°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | EPC8010ENGR |
| Inputkapacitans (Ciss) (Max) @ Vds: | 55pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs: | 0.48nC @ 5V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 100V 2.7A (Ta) Surface Mount Die |
| Afløb til Source Voltage (VDSS): | 100V |
| Beskrivelse: | TRANS GAN 100V 2.7A BUMPED DIE |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 2.7A (Ta) |
| Email: | [email protected] |
Relaterede dele til EPC8010ENGR
| Billede | Varenummer | producenter | Beskrivelse | Udsigt |
|---|---|---|---|---|
 |
EPC8010 | EPC | TRANS GAN 100V 2.7A BUMPED DIE | Forespørgsel |
|
EPC8007ENGR | EPC | TRANS GAN 40V 3.8A BUMPED DIE | Forespørgsel |
|
EPC8005ENGR | EPC | TRANS GAN 65V 2.9A BUMPED DIE | Forespørgsel |
 |
AOL1412 | Alpha & Omega Semiconductor Inc. | MOSFET N-CH 30V 85A 8ULTRASO | Forespørgsel |
 |
IRF610STRR | Vishay Siliconix | MOSFET N-CH 200V 3.3A D2PAK | Forespørgsel |
 |
2SK3746-1E | ON Semiconductor | MOSFET N-CH 1500V 2A | Forespørgsel |
 |
NTD60N02R-35G | ON Semiconductor | MOSFET N-CH 25V 8.5A IPAK | Forespørgsel |
 |
HUFA75329S3S | Fairchild/ON Semiconductor | MOSFET N-CH 55V 49A D2PAK | Forespørgsel |
|
EPC8002ENGR | EPC | TRANS GAN 65V 2A BUMPED DIE | Forespørgsel |
|
EPC8004 | EPC | TRANS GAN 40V 2.7A BUMPED DIE | Forespørgsel |
 |
NDD05N50ZT4G | ON Semiconductor | MOSFET N-CH 500V 5A DPAK | Forespørgsel |
|
EPC8009ENGR | EPC | TRANS GAN 65V 4.1A BUMPED DIE | Forespørgsel |
 |
IRF7807APBF | Infineon Technologies | MOSFET N-CH 30V 8.3A 8-SOIC | Forespørgsel |
|
EPC8008ENGR | EPC | TRANS GAN 40V 2.7A BUMPED DIE | Forespørgsel |
|
EPC8009 | EPC | TRANS GAN 65V 2.7A BUMPED DIE | Forespørgsel |
|
EPC8003ENGR | EPC | TRANS GAN 100V 2.5A BUMPED DIE | Forespørgsel |
 |
EPC8002 | EPC | TRANS GAN 65V 2.7A BUMPED DIE | Forespørgsel |
|
EPC8004ENGR | EPC | TRANS GAN 40V 4.4A BUMPED DIE | Forespørgsel |
Laast News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers