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JAN1N5416US
- Varenummer:
- JAN1N5416US
- Fabrikant:
- Microsemi
- Beskrivelse:
- DIODE GEN PURP 100V 3A AXIAL
- Blyfri Status / RoHS Status:
- Indeholder bly / RoHS ikke-kompatibel
- Tilgængelig mængde:
- 13875 Pieces
- Datablad:
- JAN1N5416US.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for JAN1N5416US, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til JAN1N5416US via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Spænding - Videresend (Vf) (Max) @ Hvis: | 1.5V @ 9A |
|---|---|
| Spænding - DC-omvendt (Vr) (Max): | 100V |
| Fart: | Fast Recovery = 200mA (Io) |
| Serie: | Military, MIL-PRF-19500/411 |
| Reverse Recovery Time (trr): | 150ns |
| Emballage: | Bulk |
| Pakke / tilfælde: | B, Axial |
| Andre navne: | 1086-2087 1086-2087-MIL |
| Driftstemperatur - Junction: | -65°C ~ 175°C |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 8 Weeks |
| Producentens varenummer: | JAN1N5416US |
| Udvidet beskrivelse: | Diode Standard 100V 3A Through Hole |
| Diodetype: | Standard |
| Beskrivelse: | DIODE GEN PURP 100V 3A AXIAL |
| Nuværende - Reverse Lækage @ Vr: | 1µA @ 100V |
| Nuværende - Gennemsnitlig Rectified (Io): | 3A |
| Kapacitans @ Vr, F: | - |
| Email: | [email protected] |
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