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JAN1N5809US
- Varenummer:
- JAN1N5809US
- Fabrikant:
- Microsemi
- Beskrivelse:
- DIODE GEN PURP 100V 6A B-MELF
- Blyfri Status / RoHS Status:
- Indeholder bly / RoHS ikke-kompatibel
- Tilgængelig mængde:
- 17349 Pieces
- Datablad:
- JAN1N5809US.pdf
Introduktion
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specifikationer
| Spænding - Videresend (Vf) (Max) @ Hvis: | 875mV @ 4A |
|---|---|
| Spænding - DC-omvendt (Vr) (Max): | 100V |
| Leverandør Device Package: | B, SQ-MELF |
| Fart: | Fast Recovery = 200mA (Io) |
| Serie: | Military, MIL-PRF-19500/477 |
| Reverse Recovery Time (trr): | 30ns |
| Emballage: | Bulk |
| Pakke / tilfælde: | SQ-MELF, B |
| Andre navne: | 1086-2125 1086-2125-MIL |
| Driftstemperatur - Junction: | -65°C ~ 175°C |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 8 Weeks |
| Producentens varenummer: | JAN1N5809US |
| Udvidet beskrivelse: | Diode Standard 100V 6A Surface Mount B, SQ-MELF |
| Diodetype: | Standard |
| Beskrivelse: | DIODE GEN PURP 100V 6A B-MELF |
| Nuværende - Reverse Lækage @ Vr: | 5µA @ 100V |
| Nuværende - Gennemsnitlig Rectified (Io): | 6A |
| Kapacitans @ Vr, F: | 60pF @ 10V, 1MHz |
| Email: | [email protected] |
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