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Vgs (th) (Max) @ Id: | 2.1V @ 1mA |
---|---|
Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | LFPAK56, Power-SO8 |
Serie: | - |
Rds On (Max) @ Id, Vgs: | 21.5 mOhm @ 15A, 10V |
Power Dissipation (Max): | 147W (Tc) |
Emballage: | Tape & Reel (TR) |
Pakke / tilfælde: | SC-100, SOT-669 |
Andre navne: | 1727-2593-2 568-13044-2-ND 934069906115 PSMN021-100YL,115 PSMN021-100YLX-ND |
Driftstemperatur: | -55°C ~ 175°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Producentens varenummer: | PSMN021-100YLX |
Inputkapacitans (Ciss) (Max) @ Vds: | 4640pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 65.6nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 100V 49A (Tc) 147W (Tc) Surface Mount LFPAK56, Power-SO8 |
Drevspænding (Maks. Rds On, Min Rds On): | 5V, 10V |
Afløb til Source Voltage (VDSS): | 100V |
Beskrivelse: | MOSFET N-CH 100V LFPAK56 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 49A (Tc) |
Email: | [email protected] |