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RQ3G150GNTB
- Varenummer:
- RQ3G150GNTB
- Fabrikant:
- LAPIS Semiconductor
- Beskrivelse:
- NCH 40V 30A POWER MOSFET
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 19257 Pieces
- Datablad:
- RQ3G150GNTB.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 2.5V @ 1mA |
|---|---|
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | 8-HSMT (3.3x3.3) |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 7.2 Ohm @ 15A, 10V |
| Power Dissipation (Max): | 20W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | 8-PowerVDFN |
| Andre navne: | RQ3G150GNTBTR |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 10 Weeks |
| Producentens varenummer: | RQ3G150GNTB |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1450pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs: | 24.1nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 40V 39A (Tc) 20W (Tc) Surface Mount 8-HSMT (3.3x3.3) |
| Drevspænding (Maks. Rds On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 40V |
| Beskrivelse: | NCH 40V 30A POWER MOSFET |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 39A (Tc) |
| Email: | [email protected] |
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