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SCT30N120
- Varenummer:
- SCT30N120
- Fabrikant:
- ST
- Beskrivelse:
- MOSFET N-CH 1200V 45A HIP247
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 16045 Pieces
- Datablad:
- 1.SCT30N120.pdf2.SCT30N120.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for SCT30N120, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til SCT30N120 via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 2.6V @ 1mA (Typ) |
|---|---|
| Vgs (Max): | +25V, -10V |
| Teknologi: | SiCFET (Silicon Carbide) |
| Leverandør Device Package: | HiP247™ |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 100 mOhm @ 20A, 20V |
| Power Dissipation (Max): | 270W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-247-3 |
| Andre navne: | 497-14960 |
| Driftstemperatur: | -55°C ~ 200°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | SCT30N120 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1700pF @ 400V |
| Gate Charge (Qg) (Max) @ Vgs: | 105nC @ 20V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 1200V (1.2kV) 40A (Tc) 270W (Tc) Through Hole HiP247™ |
| Drevspænding (Maks. Rds On, Min Rds On): | 20V |
| Afløb til Source Voltage (VDSS): | 1200V (1.2kV) |
| Beskrivelse: | MOSFET N-CH 1200V 45A HIP247 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 40A (Tc) |
| Email: | [email protected] |
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