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STH315N10F7-6
- Varenummer:
- STH315N10F7-6
- Fabrikant:
- ST
- Beskrivelse:
- MOSFET N-CH 100V 180A H2PAK-6
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 19174 Pieces
- Datablad:
- STH315N10F7-6.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 4.5V @ 250µA |
|---|---|
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | H²PAK |
| Serie: | DeepGATE™, STripFET™ VII |
| Rds On (Max) @ Id, Vgs: | 2.3 mOhm @ 60A, 10V |
| Power Dissipation (Max): | 315W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | TO-263-7, D²Pak (6 Leads + Tab) |
| Andre navne: | 497-14719-2 |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 22 Weeks |
| Producentens varenummer: | STH315N10F7-6 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 12800pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H²PAK |
| Drevspænding (Maks. Rds On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 100V |
| Beskrivelse: | MOSFET N-CH 100V 180A H2PAK-6 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 180A (Tc) |
| Email: | [email protected] |
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