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Vgs (th) (Max) @ Id: | 4.5V @ 50µA |
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Vgs (Max): | ±30V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | TO-92-3 |
Serie: | SuperMESH3™ |
Rds On (Max) @ Id, Vgs: | 4.5 Ohm @ 1A, 10V |
Power Dissipation (Max): | 2.5W (Tc) |
Emballage: | Tape & Box (TB) |
Pakke / tilfælde: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Andre navne: | 497-13391-3 STQ2LN60K3AP |
Driftstemperatur: | 150°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Producentens varenummer: | STQ2LN60K3-AP |
Inputkapacitans (Ciss) (Max) @ Vds: | 235pF @ 50V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 600V 600mA (Tc) 2.5W (Tc) Through Hole TO-92-3 |
Drevspænding (Maks. Rds On, Min Rds On): | 10V |
Afløb til Source Voltage (VDSS): | 600V |
Beskrivelse: | MOSFET N-CH 600V 0.6A TO-92 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 600mA (Tc) |
Email: | [email protected] |