Købe TPN1110ENH,L1Q med BYCHPS
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TPN1110ENH,L1Q
- Varenummer:
- TPN1110ENH,L1Q
- Fabrikant:
- Toshiba Semiconductor
- Beskrivelse:
- MOSFET N-CH 200V 7.2A 8TSON
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 17527 Pieces
- Datablad:
- TPN1110ENH,L1Q.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 4V @ 200µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | 8-TSON Advance (3.3x3.3) |
| Serie: | U-MOSVIII-H |
| Rds On (Max) @ Id, Vgs: | 114 mOhm @ 3.6A, 10V |
| Power Dissipation (Max): | 700mW (Ta), 39W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | 8-PowerVDFN |
| Andre navne: | TPN1110ENH,L1Q(M TPN1110ENHL1QTR |
| Driftstemperatur: | 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 12 Weeks |
| Producentens varenummer: | TPN1110ENH,L1Q |
| Inputkapacitans (Ciss) (Max) @ Vds: | 600pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 7nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 200V 7.2A (Ta) 700mW (Ta), 39W (Tc) Surface Mount 8-TSON Advance (3.3x3.3) |
| Afløb til Source Voltage (VDSS): | 200V |
| Beskrivelse: | MOSFET N-CH 200V 7.2A 8TSON |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 7.2A (Ta) |
| Email: | [email protected] |
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