Købe ZXMN10A08GTA med BYCHPS
Køb med garanti
ZXMN10A08GTA
- Varenummer:
- ZXMN10A08GTA
- Fabrikant:
- Diodes Incorporated
- Beskrivelse:
- MOSFET N-CH 100V 2A SOT223
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 18605 Pieces
- Datablad:
- ZXMN10A08GTA.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for ZXMN10A08GTA, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til ZXMN10A08GTA via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 2V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | SOT-223 |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 250 mOhm @ 3.2A, 10V |
| Power Dissipation (Max): | 2W (Ta) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | TO-261-4, TO-261AA |
| Andre navne: | ZXMN10A08G ZXMN10A08GTR |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 10 Weeks |
| Producentens varenummer: | ZXMN10A08GTA |
| Inputkapacitans (Ciss) (Max) @ Vds: | 405pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs: | 7.7nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 100V 2A (Ta) 2W (Ta) Surface Mount SOT-223 |
| Afløb til Source Voltage (VDSS): | 100V |
| Beskrivelse: | MOSFET N-CH 100V 2A SOT223 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 2A (Ta) |
| Email: | [email protected] |
Relaterede dele til ZXMN10A08GTA
| Billede | Varenummer | producenter | Beskrivelse | Udsigt |
|---|---|---|---|---|
 |
ZXMN10A08DN8TC | Diodes Incorporated | MOSFET 2N-CH 100V 1.6A 8SOIC | Forespørgsel |
|
ZXMN10A08DN8TA | Diodes Incorporated | MOSFET 2N-CH 100V 1.6A 8-SOIC | Forespørgsel |
 |
ZXMN10A08E6TC | Diodes Incorporated | MOSFET N-CH 100V 1.5A SOT23-6 | Forespørgsel |
 |
ZXMN10A09KTC | Diodes Incorporated | MOSFET N-CH 100V 5A DPAK | Forespørgsel |
|
ZXMN10A08E6TA | Diodes Incorporated | MOSFET N-CH 100V 1.5A SOT-23-6 | Forespørgsel |
 |
ZXMN10A07FTC | Diodes Incorporated | MOSFET N-CH 100V 700MA SOT23-3 | Forespørgsel |
|
ZXMN10A25K | Diodes Incorporated | MOSFET N-CH 100V 4.2A DPAK | Forespørgsel |
 |
ZXMN10A07ZTA | Diodes Incorporated | MOSFET N-CH 100V 1A SOT-89 | Forespørgsel |
 |
ZXMN10A11GTA | Diodes Incorporated | MOSFET N-CH 100V 1.7A SOT223 | Forespørgsel |
|
ZXMN10A07FTA | Diodes Incorporated | MOSFET N-CH 100V 700MA SOT23-3 | Forespørgsel |
|
ZXMN10B08E6TC | Diodes Incorporated | MOSFET N-CH 100V 1.6A SOT23-6 | Forespørgsel |
|
ZXMN10B08E6TA | Diodes Incorporated | MOSFET N-CH 100V 1.6A SOT23-6 | Forespørgsel |
Laast News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog