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IPB180N04S302ATMA1
- Varenummer:
- IPB180N04S302ATMA1
- Beskrivelse:
- MOSFET N-CH 40V 180A TO263-7
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 12158 Pieces
- Datablad:
- IPB180N04S302ATMA1.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for IPB180N04S302ATMA1, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til IPB180N04S302ATMA1 via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 4V @ 230µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PG-TO263-7-3 |
| Serie: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 1.5 mOhm @ 80A, 10V |
| Power Dissipation (Max): | 300W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
| Andre navne: | IPB180N04S3-02 IPB180N04S3-02-ND IPB180N04S3-02TR IPB180N04S3-02TR-ND IPB180N04S302 SP000254821 |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | IPB180N04S302ATMA1 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 14300pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 210nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 40V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7-3 |
| Afløb til Source Voltage (VDSS): | 40V |
| Beskrivelse: | MOSFET N-CH 40V 180A TO263-7 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 180A (Tc) |
| Email: | [email protected] |
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IPB180N08S402ATMA1 | Infineon Technologies | MOSFET N-CH TO263-7 | Forespørgsel |
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