Købe IPB180N04S302ATMA1 med BYCHPS
Køb med garanti
IPB180N04S302ATMA1
- Varenummer:
- IPB180N04S302ATMA1
- Beskrivelse:
- MOSFET N-CH 40V 180A TO263-7
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 12158 Pieces
- Datablad:
- IPB180N04S302ATMA1.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for IPB180N04S302ATMA1, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til IPB180N04S302ATMA1 via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 4V @ 230µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PG-TO263-7-3 |
| Serie: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 1.5 mOhm @ 80A, 10V |
| Power Dissipation (Max): | 300W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
| Andre navne: | IPB180N04S3-02 IPB180N04S3-02-ND IPB180N04S3-02TR IPB180N04S3-02TR-ND IPB180N04S302 SP000254821 |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | IPB180N04S302ATMA1 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 14300pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 210nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 40V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7-3 |
| Afløb til Source Voltage (VDSS): | 40V |
| Beskrivelse: | MOSFET N-CH 40V 180A TO263-7 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 180A (Tc) |
| Email: | [email protected] |
Relaterede dele til IPB180N04S302ATMA1
| Billede | Varenummer | producenter | Beskrivelse | Udsigt |
|---|---|---|---|---|
 |
IPB180N06S4H1ATMA1 | Infineon Technologies | MOSFET N-CH 60V 180A TO263-7 | Forespørgsel |
|
IPB180N06S4H1ATMA2 | Infineon Technologies | MOSFET N-CH 60V 180A TO263-7 | Forespørgsel |
|
IPB180N04S4H0ATMA1 | Infineon Technologies | MOSFET N-CH 40V 180A TO263-7-3 | Forespørgsel |
|
IPB180N04S4LH0ATMA1 | Infineon Technologies | MOSFET N-CH TO263-7 | Forespørgsel |
|
IPB180N04S400ATMA1 | Infineon Technologies | MOSFET N-CH 40V 180A TO263-7-3 | Forespørgsel |
|
IPB180N04S3-02 | Infineon Technologies | MOSFET N-CH 40V 180A TO263-7 | Forespørgsel |
|
IPB180N03S4L01ATMA1 | Infineon Technologies | MOSFET N-CH 30V 180A TO263-7-3 | Forespørgsel |
|
IPB180N04S401ATMA1 | Infineon Technologies | MOSFET N-CH 40V 180A TO263-7-3 | Forespørgsel |
|
IPB180N04S4L01ATMA1 | Infineon Technologies | MOSFET N-CH TO263-7 | Forespørgsel |
|
IPB180N03S4LH0ATMA1 | Infineon Technologies | MOSFET N-CH 30V 180A TO263-7-3 | Forespørgsel |
|
IPB180N08S402ATMA1 | Infineon Technologies | MOSFET N-CH TO263-7 | Forespørgsel |
Laast News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog