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IXTU1R4N60P
- Varenummer:
- IXTU1R4N60P
- Fabrikant:
- IXYS Corporation
- Beskrivelse:
- MOSFET N-CH 600V 1.4A TO251
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 17903 Pieces
- Datablad:
- IXTU1R4N60P.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 5.5V @ 25µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | TO-251 |
| Serie: | PolarHV™ |
| Rds On (Max) @ Id, Vgs: | 9 Ohm @ 700mA, 10V |
| Power Dissipation (Max): | 50W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-251-3 Short Leads, IPak, TO-251AA |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | IXTU1R4N60P |
| Inputkapacitans (Ciss) (Max) @ Vds: | 140pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 5.2nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 600V 1.4A (Tc) 50W (Tc) Through Hole TO-251 |
| Afløb til Source Voltage (VDSS): | 600V |
| Beskrivelse: | MOSFET N-CH 600V 1.4A TO251 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 1.4A (Tc) |
| Email: | [email protected] |
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