Købe IXTU1R4N60P med BYCHPS
Køb med garanti
Vgs (th) (Max) @ Id: | 5.5V @ 25µA |
---|---|
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | TO-251 |
Serie: | PolarHV™ |
Rds On (Max) @ Id, Vgs: | 9 Ohm @ 700mA, 10V |
Power Dissipation (Max): | 50W (Tc) |
Emballage: | Tube |
Pakke / tilfælde: | TO-251-3 Short Leads, IPak, TO-251AA |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Producentens varenummer: | IXTU1R4N60P |
Inputkapacitans (Ciss) (Max) @ Vds: | 140pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 5.2nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 600V 1.4A (Tc) 50W (Tc) Through Hole TO-251 |
Afløb til Source Voltage (VDSS): | 600V |
Beskrivelse: | MOSFET N-CH 600V 1.4A TO251 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 1.4A (Tc) |
Email: | [email protected] |