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NVD5863NLT4G-VF01
- Varenummer:
- NVD5863NLT4G-VF01
- Fabrikant:
- AMI Semiconductor / ON Semiconductor
- Beskrivelse:
- MOSFET N-CH 60V 14.9A DPAK
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 12056 Pieces
- Datablad:
- NVD5863NLT4G-VF01.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 3V @ 250µA |
|---|---|
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | DPAK |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 7.1 mOhm @ 41A, 10V |
| Power Dissipation (Max): | 3.1W (Ta), 96W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Andre navne: | NVD5805NT4G-VF01 NVD5863NLT4G NVD5863NLT4G-ND NVD5863NLT4G-VF01TR NVD5863NLT4GOSTR-ND |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 18 Weeks |
| Producentens varenummer: | NVD5863NLT4G-VF01 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 3850pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 60V 14.9A (Ta), 82A (Tc) 3.1W (Ta), 96W (Tc) Surface Mount DPAK |
| Drevspænding (Maks. Rds On, Min Rds On): | 4.5V, 10V |
| Afløb til Source Voltage (VDSS): | 60V |
| Beskrivelse: | MOSFET N-CH 60V 14.9A DPAK |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 14.9A (Ta), 82A (Tc) |
| Email: | [email protected] |
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