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SIE836DF-T1-GE3
- Varenummer:
- SIE836DF-T1-GE3
- Fabrikant:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N-CH 200V 18.3A POLARPAK
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 14246 Pieces
- Datablad:
- SIE836DF-T1-GE3.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for SIE836DF-T1-GE3, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til SIE836DF-T1-GE3 via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 4.5V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | 10-PolarPAK® (SH) |
| Serie: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 130 mOhm @ 4.1A, 10V |
| Power Dissipation (Max): | 5.2W (Ta), 104W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | 10-PolarPAK® (SH) |
| Andre navne: | SIE836DF-T1-GE3TR SIE836DFT1GE3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | SIE836DF-T1-GE3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1200pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 41nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 200V 18.3A (Tc) 5.2W (Ta), 104W (Tc) Surface Mount 10-PolarPAK® (SH) |
| Afløb til Source Voltage (VDSS): | 200V |
| Beskrivelse: | MOSFET N-CH 200V 18.3A POLARPAK |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 18.3A (Tc) |
| Email: | [email protected] |
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