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SISS23DN-T1-GE3
- Varenummer:
- SISS23DN-T1-GE3
- Fabrikant:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET P-CH 20V 50A PPAK 1212-8S
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 17227 Pieces
- Datablad:
- SISS23DN-T1-GE3.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for SISS23DN-T1-GE3, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til SISS23DN-T1-GE3 via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 900mV @ 250µA |
|---|---|
| Vgs (Max): | ±8V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PowerPAK® 1212-8S (3.3x3.3) |
| Serie: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 20A, 4.5V |
| Power Dissipation (Max): | 4.8W (Ta), 57W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | 8-PowerVDFN |
| Andre navne: | SISS23DN-T1-GE3TR |
| Driftstemperatur: | -50°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 24 Weeks |
| Producentens varenummer: | SISS23DN-T1-GE3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 8840pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs: | 300nC @ 10V |
| FET Type: | P-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | P-Channel 20V 50A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3) |
| Drevspænding (Maks. Rds On, Min Rds On): | 1.8V, 4.5V |
| Afløb til Source Voltage (VDSS): | 20V |
| Beskrivelse: | MOSFET P-CH 20V 50A PPAK 1212-8S |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 50A (Tc) |
| Email: | [email protected] |
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