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Vgs (th) (Max) @ Id: | 3V @ 1mA |
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Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | TO-92-3 |
Serie: | - |
Rds On (Max) @ Id, Vgs: | 5 Ohm @ 500mA, 10V |
Power Dissipation (Max): | 400mW (Ta) |
Emballage: | Tape & Box (TB) |
Pakke / tilfælde: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Andre navne: | 2N7000TA-ND 2N7000TA_T 2N7000TATB 2N7000TATR 2N7000TATR-ND |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 12 Weeks |
Producentens varenummer: | 2N7000TA |
Inputkapacitans (Ciss) (Max) @ Vds: | 50pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | - |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 60V 200mA (Tc) 400mW (Ta) Through Hole TO-92-3 |
Drevspænding (Maks. Rds On, Min Rds On): | 4.5V, 10V |
Afløb til Source Voltage (VDSS): | 60V |
Beskrivelse: | MOSFET N-CH 60V 0.2A TO-92 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 200mA (Tc) |
Email: | [email protected] |