Købe AOI4T60P med BYCHPS
Køb med garanti
		| Vgs (th) (Max) @ Id: | 5V @ 250µA | 
|---|---|
| Teknologi: | MOSFET (Metal Oxide) | 
| Leverandør Device Package: | TO-251 | 
| Serie: | - | 
| Rds On (Max) @ Id, Vgs: | 2.1 Ohm @ 2A, 10V | 
| Power Dissipation (Max): | 83W (Tc) | 
| Emballage: | Tube | 
| Pakke / tilfælde: | TO-251-3 Stub Leads, IPak | 
| Driftstemperatur: | -50°C ~ 150°C (TJ) | 
| Monteringstype: | Through Hole | 
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) | 
| Producentens varenummer: | AOI4T60P | 
| Inputkapacitans (Ciss) (Max) @ Vds: | 522pF @ 100V | 
| Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V | 
| FET Type: | N-Channel | 
| FET-funktion: | - | 
| Udvidet beskrivelse: | N-Channel 600V 4A (Tc) 83W (Tc) Through Hole TO-251 | 
| Afløb til Source Voltage (VDSS): | 600V | 
| Beskrivelse: | MOSFET N-CH | 
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 4A (Tc) | 
| Email: | [email protected] |