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Vgs (th) (Max) @ Id: | 2.2V @ 250µA |
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Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | TO-251B |
Serie: | - |
Rds On (Max) @ Id, Vgs: | 5 mOhm @ 20A, 10V |
Power Dissipation (Max): | 2.5W (Ta), 50W (Tc) |
Emballage: | Tube |
Pakke / tilfælde: | TO-251-3 Stub Leads, IPak |
Driftstemperatur: | -55°C ~ 175°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Producentens varenummer: | AOI516_001 |
Inputkapacitans (Ciss) (Max) @ Vds: | 1229pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 30V 18A (Ta), 46A (Tc) 2.5W (Ta), 50W (Tc) Through Hole TO-251B |
Afløb til Source Voltage (VDSS): | 30V |
Beskrivelse: | MOSFET N-CH 30V 18A |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 18A (Ta), 46A (Tc) |
Email: | [email protected] |