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APT18M80B
- Varenummer:
- APT18M80B
- Fabrikant:
- Microsemi
- Beskrivelse:
- MOSFET N-CH 800V 19A TO-247
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 18798 Pieces
- Datablad:
- 1.APT18M80B.pdf2.APT18M80B.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for APT18M80B, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til APT18M80B via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 5V @ 1mA |
|---|---|
| Vgs (Max): | ±30V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | TO-247 [B] |
| Serie: | POWER MOS 8™ |
| Rds On (Max) @ Id, Vgs: | 530 mOhm @ 9A, 10V |
| Power Dissipation (Max): | 500W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-247-3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 22 Weeks |
| Producentens varenummer: | APT18M80B |
| Inputkapacitans (Ciss) (Max) @ Vds: | 3760pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 800V 19A (Tc) 500W (Tc) Through Hole TO-247 [B] |
| Drevspænding (Maks. Rds On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 800V |
| Beskrivelse: | MOSFET N-CH 800V 19A TO-247 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 19A (Tc) |
| Email: | [email protected] |
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