Købe APT45GP120B2DQ2G med BYCHPS
Køb med garanti
APT45GP120B2DQ2G
- Varenummer:
- APT45GP120B2DQ2G
- Fabrikant:
- Microsemi
- Beskrivelse:
- IGBT 1200V 113A 625W TMAX
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 13290 Pieces
- Datablad:
- APT45GP120B2DQ2G.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for APT45GP120B2DQ2G, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til APT45GP120B2DQ2G via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Spænding - Samler Emitter Opdeling (Max): | 1200V |
|---|---|
| Vce (på) (Max) @ Vge, Ic: | 3.9V @ 15V, 45A |
| Testtilstand: | 600V, 45A, 5 Ohm, 15V |
| Td (tænd / sluk) @ 25 ° C: | 18ns/100ns |
| Skifte energi: | 900µJ (on), 905µJ (off) |
| Serie: | POWER MOS 7® |
| Strøm - Max: | 625W |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-247-3 Variant |
| Andre navne: | APT45GP120B2DQ2GMI APT45GP120B2DQ2GMI-ND |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 22 Weeks |
| Producentens varenummer: | APT45GP120B2DQ2G |
| Input Type: | Standard |
| IGBT Type: | PT |
| Gate Charge: | 185nC |
| Udvidet beskrivelse: | IGBT PT 1200V 113A 625W Through Hole |
| Beskrivelse: | IGBT 1200V 113A 625W TMAX |
| Nuværende - Collector Pulsed (Icm): | 170A |
| Nuværende - Samler (Ic) (Max): | 113A |
| Email: | [email protected] |
Relaterede dele til APT45GP120B2DQ2G
| Billede | Varenummer | producenter | Beskrivelse | Udsigt |
|---|---|---|---|---|
 |
APT45GP120BG | Microsemi Corporation | IGBT 1200V 100A 625W TO247 | Forespørgsel |
 |
APT45GP120J | Microsemi Corporation | IGBT 1200V 75A 329W SOT227 | Forespørgsel |
|
APT45GP120JDQ2 | Microsemi Corporation | IGBT 1200V 75A 329W SOT227 | Forespørgsel |
 |
APT45GR65SSCD10 | Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | Forespørgsel |
 |
RJP6085DPK-00#T0 | Renesas Electronics America | IGBT 600V 40A 178.5W TO-3P | Forespørgsel |
 |
IKW25T120FKSA1 | Infineon Technologies | IGBT 1200V 50A 190W TO247-3 | Forespørgsel |
 |
APT45M100J | Microsemi Corporation | MOSFET N-CH 1000V 45A SOT-227 | Forespørgsel |
|
APT45GR65BSCD10 | Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | Forespørgsel |
 |
IXGK50N60B2D1 | IXYS | IGBT 600V 75A 400W TO264 | Forespørgsel |
|
APT45GR65B2DU30 | Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | Forespørgsel |
|
APT45GR65B | Microsemi Corporation | IGBT 650V 92A 357W TO-247 | Forespørgsel |
Laast News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog