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| Vgs (th) (Max) @ Id: | 2.5V @ 1mA |
|---|---|
| Teknologi: | SiCFET (Silicon Carbide) |
| Leverandør Device Package: | D3Pak |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 55 mOhm @ 40A, 20V |
| Power Dissipation (Max): | 625W (Tc) |
| Emballage: | Bulk |
| Pakke / tilfælde: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 22 Weeks |
| Producentens varenummer: | APT80SM120S |
| Inputkapacitans (Ciss) (Max) @ Vds: | - |
| Gate Charge (Qg) (Max) @ Vgs: | 235nC @ 20V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 1200V (1.2kV) 80A (Tc) 625W (Tc) Surface Mount D3Pak |
| Afløb til Source Voltage (VDSS): | 1200V (1.2kV) |
| Beskrivelse: | POWER MOSFET - SIC |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 80A (Tc) |
| Email: | [email protected] |